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1 memory all data sheets are subject to change without notice (858) 503-3300 - fax: (858) 503-3301 - www.maxwell.com p reliminary 4 megabit (512k x 8-bit) 33lv0408 ?2002 maxwell technologies all rights reserved. low voltage cmos 08.13.02 rev 1 f eatures : ?r ad -p ak ? technology radiation-hardened against natural space radiation ? 524,288 x 8 bit organization total dose hardness: - > 100 krad (si), depending upon space mis- sion ? excellent single event effect - sel th : > 68 mev/mg/cm 2 - seu th : = 3 mev/mg/cm 2 - seu saturated cross section: 6e-9 cm 2 /bit ? package: - 32-pin r ad -p ak ? flat pack ? fast access time: - 15, 20, 25 ns maximum times available ? single 3.3 volt power supply ? fully static operation - no clock or refresh required ? three state outputs ? ttl compatible inputs and outputs ? low power: - standby: 60 ma (ttl); 5 ma (cmos) d escription : maxwell technologies? 33lv0408 high-density 4 megabit sram microcircuit features a greater than 100 krad (si) total dose tolerance, depending upon space mission. using maxwell?s radiation-hard- ened r ad -p ak ? packaging technology, the 33lv0408 realizes a high density, high perfor- mance, and low power consumption. its fully static design eliminates the need for external clocks, while the cmos circuitry reduces power consump- tion and provides higher reliability. the 33lv0408 is equipped with eight common input/output lines, chip select and output enable, allowing for greater system flexibility and eliminating bus contention. the 33lv0408 features the same advanced 512k x 8-bit sram, high-speed, and low-power demand as the commercial counterpart. maxwell technologies' patented r ad -p ak ? packag- ing technology incorporates radiation shielding in the microcircuit package. it eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. in a geo orbit, r ad -p ak ? provides greater than 100 krad (si) radiation dose tolerance. this product is available with screening up to class s. logic diagram 33lv0408
2 all data sheets are subject to change without notice ?2002 maxwell technologies all rights reserved. 4 megabit (512k x 8-bit) low voltage sram 33lv0408 08.13.02 rev 1 t able 1. p inout d escription p in s ymbol d escription 12-5, 27, 26, 23, 25, 4, 28, 3, 31, 2, 30, 1 a0-a18 address inputs 29 we write enable 22 cs chip select 24 oe output enable 13-15, 17-21 i/o 1-i/o 8 data inputs/outputs 32 v cc power (+5.0v) 16 v ss ground t able 2. 33lv0408 a bsolute m aximum r atings p arameter s ymbol m in m ax u nit voltage on v cc supply relative to v ss v cc -0.5 4.6 v voltage on any pin relative to v ss v in , v out -0.5 4.6 v power dissipation p d -- 1.0 w storage temperature t s -65 +150 c operating temperature t a -55 +125 c t able 3. d elta l imits p arameter v ariation i cc 10% of stated vaule in table 5 i sb 10% of stated vaule in table 5 i sb1 10% of stated vaule in table 5 i li 10% of stated vaule in table 5
3 all data sheets are subject to change without notice ?2002 maxwell technologies all rights reserved. 4 megabit (512k x 8-bit) low voltage sram 33lv0408 08.13.02 rev 1 t able 4. 33lv0408 r ecommended o perating c onditions (v cc = 3.3 + 0.3v, t a = -55 to +125 c, unless otherwise noted ) p arameter s ymbol m in m ax u nit supply voltage v cc 3.0 3.6 v ground v ss 00v input high voltage 1 1. v ih (max) = v cc +2.0v ac (pulse width < 10 ns) for i < 20 ma v ih 2.0 v cc +0.3 1 v input low voltage 2 2. v il (min) = -2.0v ac(pulse width < 10 ns) for i < 20 ma v il -0.3 2 0.8 v t able 5. 33lv0408 dc e lectrical c haracteristics (v cc = 3.3v + 0.3v, t a = -55 to +125 c, unless otherwise specified ) p arameter s ymbol c ondition s ubgroups m in m ax u nit input leakage current i li v in = v ss to v cc 1, 2, 3 -2 2 a output leakage current i lo cs =v ih or oe =v ih or we =v il , v out =v ss to v cc 1, 2, 3 -2 2 a output low voltage v ol i ol = 8ma 1, 2, 3 -- 0.4 v output high voltage v oh i oh = -4ma 1, 2, 3 2.4 -- v operating current -15 -20 -25 i cc min cycle, 100% duty, cs =v il , i out =0ma, v in = v ih or v il 1, 2, 3 -- -- -- ? 180 170 ma standby power supply current i sb cs = v ih , min cycle 1, 2, 3 -- 60 ma cmos standby power supply current i sb1 cs > v cc - 0.2v, f = 0 mhz, v in > v cc - 0.2v or v in < 0.2v 1, 2, 3 -- 5 ma input capacitance 1 1. guaranteed by design. c in v in = 0v, f = 1mhz, t a = 25 c 1, 2, 3 -- 7 pf output capacitance 1 c i/o v i/o = 0v 4, 5, 6 -- 8 pf t able 6. 33lv0408 ac t est c onditions and c haracteristics (v cc = 3.3 + 0.3v, t a = -55 to +125 c, unless otherwise noted ) p arameter m in t yp m ax u nits input pulse level 0.0 -- 3.0 v output timing measurement reference level -- -- 1.5 v input rise/fall time -- -- 3.0 ns
4 all data sheets are subject to change without notice ?2002 maxwell technologies all rights reserved. 4 megabit (512k x 8-bit) low voltage sram 33lv0408 08.13.02 rev 1 input timing measurement reference level -- -- 1.5 v t able 7. 33lv0408 ac c haracteristics for r ead c ycle (v cc = 3.3v + 0.3v, t a = -55 to +125 c, unless otherwise specified ) p arameter s ymbol s ubgroups m in t yp m ax u nit read cycle time -15 -20 -25 9, 10, 11 15 20 25 -- -- -- -- -- -- ns address access time -15 -20 -25 t aa 9, 10, 11 -- -- -- -- -- -- 15 20 25 ns chip select access time -15 -20 -25 t co 9, 10, 11 -- -- -- -- -- -- 15 20 25 ns output enable to output valid -15 -20 -25 t oe 9, 10, 11 -- -- -- -- -- -- 7 10 12 ns chip enable to output in low-z -15 -20 -25 t lz 9, 10, 11 -- -- -- 3 3 3 -- -- -- ns output enable to output in low-z -15 -20 -25 t olz 9, 10, 11 -- -- -- 0 0 0 -- -- -- ns chip deselect to output in high-z -15 -20 -25 t hz 9, 10, 11 -- -- -- ? ? ? -- -- -- ns output disable to output in high-z -15 -20 -25 t ohz 9, 10, 11 -- -- -- ? ? ? -- -- -- ns output hold from address change -15 -20 -25 t oh 9, 10, 11 ? 3 5 -- -- -- -- -- -- ns t able 6. 33lv0408 ac t est c onditions and c haracteristics (v cc = 3.3 + 0.3v, t a = -55 to +125 c, unless otherwise noted ) p arameter m in t yp m ax u nits
5 all data sheets are subject to change without notice ?2002 maxwell technologies all rights reserved. 4 megabit (512k x 8-bit) low voltage sram 33lv0408 08.13.02 rev 1 subgroups chip select to power up time -15 -20 -25 t pu 9, 10, 11 -- -- -- 0 0 0 -- -- -- ns chip select to power down time -15 -20 -25 t pd 9, 10, 11 -- -- -- ? ? ? -- -- -- ns t able 8. 33lv0408 f unctional d escription cs we oe m ode i/o p in s upply c urrent hx 1 1. x = don?t care. x 1 not select high-z i sb , i sb1 l h h output disable high-z i cc l h l read d out i cc llx 1 write d in i cc t able 9. 33lv0408 ac c haracteristics for w rite c ycle (v cc = 3.3v + 0.3v, t a = -55 to +125 c, unless otherwise specified ) p arameter s ubgroups s ymbol m in t yp m ax u nit write cycle time -20 -25 -30 9, 10, 11 t wc 20 25 30 -- -- -- -- -- -- ns chip select to end of write -20 -25 -30 9, 10, 11 t cw ? 14 15 -- -- -- -- -- -- ns address setup time -20 -25 -30 9, 10, 11 t as 0 0 0 -- -- -- -- -- -- ns address valid to end of write -20 -25 -30 9, 10, 11 t aw ? 14 15 -- -- -- -- -- -- ns t able 7. 33lv0408 ac c haracteristics for r ead c ycle (v cc = 3.3v + 0.3v, t a = -55 to +125 c, unless otherwise specified ) p arameter s ymbol s ubgroups m in t yp m ax u nit
6 all data sheets are subject to change without notice ?2002 maxwell technologies all rights reserved. 4 megabit (512k x 8-bit) low voltage sram 33lv0408 08.13.02 rev 1 write pulse width (oe high) -20 -25 -30 9, 10, 11 t wp ? 14 15 -- -- -- -- -- -- ns write recovery time -20 -25 -30 9, 10, 11 t wr 0 0 0 -- -- -- -- -- -- ns write to output in high-z -20 -25 -30 9, 10, 11 t whz -- -- -- ? 5 5 -- -- -- ns write pulse width (oe low) -20 -25 -30 9, 10, 11 t wp1 20 25 30 -- -- -- -- -- -- ns data to write time overlap -20 -25 -30 9, 10, 11 t dw ? 9 10 -- -- -- -- -- -- ns end write to output low-z -20 -25 -30 9, 10, 11 t ow -- -- -- ? 6 7 -- -- -- ns data hold from write time -20 -25 -30 9, 10, 11 t dh 0 0 0 -- -- -- -- -- -- ns t able 9. 33lv0408 ac c haracteristics for w rite c ycle (v cc = 3.3v + 0.3v, t a = -55 to +125 c, unless otherwise specified ) p arameter s ubgroups s ymbol m in t yp m ax u nit
7 all data sheets are subject to change without notice ?2002 maxwell technologies all rights reserved. 4 megabit (512k x 8-bit) low voltage sram 33lv0408 08.13.02 rev 1 f igure 1. ac t est l oad t iming w aveform of r ead c ycle (1) f igure 2. t iming w aveform of r ead c ycle (2) read cycle notes: 1 .we is high for read cycle. 2 . all read cycle timing is referenced form the last valid address to the first transition address. 3 .t hz and t ohz are defined as the time at which the outputs achieve the op en circuit condition and are not referenced to v oh or v ol levels. 4 . at any given temperature and voltage condition, t hz(max) is less than t lz(min) both for a given device and from device to device. 5 . transition is measured + 200mv from steady state voltage. this parameter is sampled and not 100% tested. 6 . device is continuously selected with cs = v il. 7 . address valid prior to coinci dent with cs transition low. 8 . for common i/o applications, minimization or elim ination of bus contention c ondition is necessary dur- ing read and write cycle.
8 all data sheets are subject to change without notice ?2002 maxwell technologies all rights reserved. 4 megabit (512k x 8-bit) low voltage sram 33lv0408 08.13.02 rev 1 f igure 3. t iming w aveform of w rite c ycle (1) f igure 4. t iming w aveform of w rite c ycle (2) f igure 5. t iming w aveform of w rite c ycle (3)
9 all data sheets are subject to change without notice ?2002 maxwell technologies all rights reserved. 4 megabit (512k x 8-bit) low voltage sram 33lv0408 08.13.02 rev 1 w rite c ycle n ote : 1 . all write cycle timing is referenced from the last valid address to the first transition address. 2 . a write occurs during the overlap of a low cs and a low we . a write begins at the latest transition among cs going low and we going low: a write ends at the earliest transition among cs going high and we going high. t wp is measured from beginning of write to the end of write. 3 .t cw is measured from the later of cs going low to end of write. 4 .t as is measured from the address valid to the beginning of write. 5 .t wr is measured form the end of write to the address change. twr applied in case a write ends as cs , or wr going high. 6 . if oe , cs and we are in the read mode during this period, th e i/o pins are in the output low-z state. inputs of opposite phase of the output must not be applied because bus contention can occur. 7 . for common i/o applications, minimi zation or elimination of bus contention conditions is necessary during read and write cycle. 8 .ic cs goes low simultaneously with we going low or after we going low, the outputs remain high impedance state. 9 .d out is the read data of the new address. 10 . when cs is low: i/o pins are in the output state. th e input signals in the opposite phase leading to the output should not be applied.
10 all data sheets are subject to change without notice ?2002 maxwell technologies all rights reserved. 4 megabit (512k x 8-bit) low voltage sram 33lv0408 08.13.02 rev 1 f32-06 note: all dimensions in inchesimportant notice: 32 p in r ad -p ak ? f lat p ackage s ymbol d imension m in n om m ax a 0.120 0.135 0.155 b 0.013 0.015 0.020 c 0.008 0.010 0.012 d -- 0.930 0.940 e 0.635 0.645 0.655 e1 -- -- 0.690 e2 0.550 0.565 -- e3 0.030 0.040 -- e 0.050 bsc l 0.390 0.400 0.410 q 0.026 0.098 -- s1 0.005 0.082 -- n32
11 all data sheets are subject to change without notice ?2002 maxwell technologies all rights reserved. 4 megabit (512k x 8-bit) low voltage sram 33lv0408 08.13.02 rev 1 these data sheets are created using the chip manuf acturers published specifications. maxwell technologies verifies func tionality by testing key parameters eith er by 100% testing, sample test- ing or characterization. the specifications presented within these data sheets represent the latest and most accurate information available to date. however, these s pecifications are subject to change without notice and maxwell technologies assumes no responsi bility for the use of this information. maxwell technologies? products are not authorized for use as critical components in life support devices or systems without express wri tten approval from maxwell technologies. any claim against maxwell technologies must be m ade within 90 days from the date of shipment from maxwell technologies. maxw ell technologies? liability shal l be limited to replacement of defective parts.

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